Crosstalk of HgCdTe LWIR n-on-p diode arrays  

作　　者：孙英会 张波 于梅芳 廖清君 张燕 文鑫 姜偑璐 胡晓宁 戴宁 

机构地区：[1]Shanghai Institute of Technical Physics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2009年第9期49-52,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Nos.60221502,10434090);the Shanghai City Committee of Science and Technology in China (Nos.07JC14058,0752nm016)

摘　　要：Crosstalk of HgCdTe long-wavelength infrared （LWIR） n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He-Ne laser at liquid nitrogen temperature and room temperature. The experimental results show that crosstalk between the nearest neighboring diodes decreases exponentially as the diode pitch increases, and the factors that affect the obtained crosstalk are presented and analyzed. Crosstalk out of the nominal diode area （optically sensitive area） is also measured and discussed.Crosstalk of HgCdTe long-wavelength infrared （LWIR） n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He-Ne laser at liquid nitrogen temperature and room temperature. The experimental results show that crosstalk between the nearest neighboring diodes decreases exponentially as the diode pitch increases, and the factors that affect the obtained crosstalk are presented and analyzed. Crosstalk out of the nominal diode area （optically sensitive area） is also measured and discussed.

关 键 词：CROSSTALK HGCDTE n-on-p diode arrays scanning laser microscope 

分 类 号：TN31[电子电信—物理电子学]