High-performance electroabsorption modulator  

作　　者：张伟 潘教青 朱洪亮 王桓 王圩 

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2009年第9期53-56,共4页半导体学报（英文版）

基　　金：Project supported by the National High Technology Research and Development Program of China (No.2006AA01Z256);the State Key Development Program for Basic Research of China (Nos.2006CB604901,2006CB604902);the National Natural Science Foundationof China (No.90401025)

摘　　要：A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a twostep low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response （E/O response） without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a twostep low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response （E/O response） without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.

关 键 词：electroabsorption modulator quantum well intermixing intra-step quantum well 

分 类 号：TP21[自动化与计算机技术—检测技术与自动化装置]