Lithography-independent and large scale fabrication of a metal electrode nanogap  

作　　者：李艳 王晓峰 张加勇 王晓东 樊中朝 杨富华 

机构地区：[1]Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2009年第9期142-145,共4页半导体学报（英文版）

基　　金：Project supported by the National High-Tech Research and Development Program of China (No.2008AA031402)

摘　　要：A lithography-independent and wafer scale method to fabricate a metal nanogap structure is demonstrated. Polysilicon was first dry etched using photoresist （PR） as the etch mask patterned by photolithography. Then, by depositing conformal SiO2 on the polysilicon pattern, etching back SiO2 anisotropically in the perpendicular direction and removing the polysilicon with KOH, a sacrificial SiO2 spacer was obtained. Finally, after metal evaporation and lifting-off of the SiO2 spacer, an 82 nm metal-gap structure was achieved. The size of the nanogap is not determined by the photolithography, but by the thickness of the SiO2. The method reported in this paper is compatible with modern semiconductor technology and can be used in mass production.A lithography-independent and wafer scale method to fabricate a metal nanogap structure is demonstrated. Polysilicon was first dry etched using photoresist （PR） as the etch mask patterned by photolithography. Then, by depositing conformal SiO2 on the polysilicon pattern, etching back SiO2 anisotropically in the perpendicular direction and removing the polysilicon with KOH, a sacrificial SiO2 spacer was obtained. Finally, after metal evaporation and lifting-off of the SiO2 spacer, an 82 nm metal-gap structure was achieved. The size of the nanogap is not determined by the photolithography, but by the thickness of the SiO2. The method reported in this paper is compatible with modern semiconductor technology and can be used in mass production.

关 键 词：lithography-independent NANOGAP conformal deposition anisotropic etching 

分 类 号：TB383.1[一般工业技术—材料科学与工程]