Dependence of wet etch rate on deposition,annealing conditions and etchants for PECVD silicon nitride film  

作　　者：唐龙娟 朱银芳 杨晋玲 李艳 周威 解婧 刘云飞 杨富华 

机构地区：[1]Institute of Semiconductors,Chinese Academy of Sciences [2]State Key Laboratory of Transducer Technology

出　　处：《Journal of Semiconductors》2009年第9期151-154,共4页半导体学报（英文版）

基　　金：Project supported by the National High Technology Research and Development Program of China (No.2007AA04Z322);the State Key Development Program for Basic Research of China (No.2009CB320305);the Hundred Talents Plan of Chinese Academy of Sciences

摘　　要：The influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition （PECVD） silicon nitride thin film is studied. The deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of SiNx：H by HF solution. A low etch rate was achieved by increasing the SiH4 gas flow rate or annealing temperature, or decreasing the NH3 and N2 gas flow rate. Concentrated, buffered, and dilute hydrofluoric acid were utilized as etchants for Sit2 and SiNx：H. A high etching selectivity of Sit2 over SiNx：H was obtained using highly concentrated buffered HEThe influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition （PECVD） silicon nitride thin film is studied. The deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of SiNx：H by HF solution. A low etch rate was achieved by increasing the SiH4 gas flow rate or annealing temperature, or decreasing the NH3 and N2 gas flow rate. Concentrated, buffered, and dilute hydrofluoric acid were utilized as etchants for Sit2 and SiNx：H. A high etching selectivity of Sit2 over SiNx：H was obtained using highly concentrated buffered HE

关 键 词：plasma enhanced chemical vapor deposition silicon nitride HF solution etch rate 

分 类 号：TN304.055[电子电信—物理电子学] O484.1[理学—固体物理]