双偏压辅助HF-PECVD沉积纳米金刚石薄膜工艺参数的AFM分析  

AFM Analysis of Deposited Nanocrystalline Diamond Film by Double Bias-voltage Assited HF-PECVD

作　　者：唐元洪[1,2] 张恩磊[1] 谭艳[1] 林良武[2] 张勇[1] 郭池[1] 

机构地区：[1]湖南大学材料科学与工程学院,长沙410082 [2]中南大学粉末冶金国家重点实验室,长沙410083

出　　处：《材料导报》2009年第18期1-4,共4页Materials Reports

基　　金：湖南省科技项目(04FJ3036;05FJ3003);国家自然科学基金委员会创新研究群体科学基金(50721003)

摘　　要：采用双偏压辅助热丝-等离子增强化学沉积系统制备了纳米金刚石薄膜。采用AFM、SEM、Raman等考察了不同工艺条件对纳米金刚石薄膜形貌、粗糙度、内部结构等的影响。结果表明,热丝温度降低,所形成薄膜的晶粒尺寸变大,薄膜表面高低起伏较大,粗糙度也随之增大;随着射频输出功率的增大,等离子体轰击基底的能力增强,但过大的功率会使构成薄膜的晶粒变大;随着偏压的不断增大,氢离子体对薄膜表面的刻蚀程度逐渐增大,从而有利于形成纳米金刚石薄膜。Nanocrystalline diamond film is deposited by double bias voltage assisted HF-PECVD system. Microscale pictures, RMS and structures of film deposited under different conditions are analysized by AFM, SEM and Raman. The results show that the crystalline and RMS of the film are larger with the temperature rising. With the power of radio frequency heightened, the ability of plasma bombing the base is enhanced, but much larger crystallines form with too great power. The high bias voltage is the optimum condition for nanocrystalline film growth.

关 键 词：纳米金刚石薄膜 双偏压 热丝-等离子化学气相沉积 原子力显微镜 

分 类 号：O484.1[理学—固体物理] TQ323.8[理学—物理]