具有多波长处理功能的单片集成光探测器阵列  

A Wavelength Selective Monolithically Integrated Photodetector Array

作　　者：段晓峰[1] 黄永清[1] 王琦[1] 黄辉[1] 任晓敏[1] 温凯[1] 

机构地区：[1]北京邮电大学信息光子学与光通信教育部重点实验室,北京100876

出　　处：《中国激光》2009年第9期2362-2366,共5页Chinese Journal of Lasers

基　　金：国家973计划(2003CB314900);国家863计划(2007AA03Z418);高等学校学科创新引智计划(B07005);教育部长江学者和创新团队发展计划(IRT0609)资助课题

摘　　要：从理论上设计并研制了一种用于可重构光分插复用技术中的具有多波长处理功能的单片集成光探测器阵列,器件在GaAs基衬底上集成了GaAs/AlGaAs材料的法布里-珀罗谐振腔和InP-In_(0.53)Ga_(0.47)As-InP材料的PIN光探测器。为了能够实现对多路波长的探测,首先利用湿法腐蚀,改变不同区域谐振腔的厚度,然后通过二次外延完成谐振腔的生长,最后利用低温缓冲层技术在GaAs材料上异质外延高质量的InP基的PIN结构。器件的工作波长位于1500 nm左右。可实现对4路波长,间隔为10 nm的光信号探测,光谱响应线宽低于0.8 nm,峰值量子效率达到12%以上,响应速率达到8.2 GHz。实验测试结果与理论分析进行了对比,并得到了很好的解释。A wavelength selective monolithically integrated photodetector array is fabricated and characterized, which can be used for reconfigurable optical add-drop multiplexers. The integrated device consists of GaAs/AIGaAs Fabry-Perot resonant cavities and InP-In0.53 Ga0.47 As-InP PIN photodetectors on the GaAs substrate. In order to achieve multiple channel routing detection, the thickness of GaAs-hased resonant cavity is varied by wet etching, and then regrowth of the resonant cavities are accomplished by using the second epitaxy. High-quality heteroepitaxy is realized by employing a thin low-temperature buffer layer. The device is operated at a wavelength around 1500 nm for four channels with 10 nm interval. A spectral linewidth smaller than 0.8 nm, an external quantum efficiency of about 12 %, and response rate of 8.2 GHz are simultaneously obtained in the device. The experiment result exhibits good agreement with the calculation.

关 键 词：集成光学 光探测器阵列 多波长处理 异质外延 

分 类 号：TN36[电子电信—物理电子学]