CIS太阳电池材料的研究进展  

The research development of CIS solar cell materials

作　　者：刘科高[1,2] 王继扬[1] 刘宏[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,山东济南250100 [2]山东建筑大学材料科学与工程学院,山东济南250101

出　　处：《功能材料》2009年第9期1413-1415,1421,共4页Journal of Functional Materials

基　　金：山东省优秀中青年科学家科研奖励基金资助项目(2007BS04017)

摘　　要：综述了国内外太阳电池及其材料的发展概况。目前应用的光电转换材料主要有硅材料和化合物半导体材料,介绍了用这几类材料制作的太阳电池的特点,重点介绍了其光电转换效率。在薄膜电池材料中重点综述了铜铟硒(CIS)基薄膜太阳电池的研究进展。由于制约太阳电池发展的关键问题是制备成本高和转换效率低,提出了采用化学法制备CIS基薄膜材料及其梯度带隙,该方法将开辟高性能CIS基吸收层薄膜材料及其器件制备的低成本新途径。The developments of solar cells and their materials are summarized. The photoelectric materials applied at present are mostly silicon materials and compound semiconductor materials. It introduces the characteristics of solar cells made by these materials especially their photoelectric conversion efficiency. The research progress of the copper-indium-selenium （CIS） base thin film solar cells is mainly introduced in the thin film cells. Since the key problems for restricting the solar cell development are the high manufacturing cost and low conversion efficiency, it is suggested to prepare the CIS-base thin film materials and their gradient band gap by chemical method. This method will open up the low cost novel way to prepare the CIS-base photoelectric thin film materials with high performance and their devices.

关 键 词：太阳电池 光电转换 CulnSe2 梯度带隙 

分 类 号：TB34[一般工业技术—材料科学与工程]