汞修饰掺锡三氧化二铟导电玻璃光透薄层电化学池的设计  

Mercury Indium Trioxide Doped With Tin Optically Transparent Thin layer Electrochemical Cell

作　　者：魏培海[1] 李斌[1] 许青[1] 买光昕[1] 王春暖[2] 

机构地区：[1]山东省教育学院化学系 [2]山东矿业学院化工系

出　　处：《分析测试技术与仪器》1998年第2期78-83,共6页Analysis and Testing Technology and Instruments

摘　　要：报道了汞膜修饰掺锡三氧化二铟导电玻璃电极的制备及其薄层电化学池的设计，测试了电极和薄层池的光、电化学性能。在水溶液中，与基底电极相比，该电极的负电位范围增加了７００ｍＶ，并表现出普通汞电极的电化学性质。以此电极制得的薄层池可适用于氧化还原电位较负的电化学过程的光谱电化学研究及金属离子的电化学分析。A tin doped indium trioxide conducting electrode coated with mercury film (Hg ITO) was obtained and an optically transparent thin layer electrochemical cell with Hg ITO as electrodes was designed. The optical and electrochemical properties of Hg ITO electrode and the cell were tested. In aqueous solutions, the negative potential range of this Hg ITO electrode was 700mV larger than that of ITO electrode. The Hg ITO electrode showed the electrochemical properties of Hg electrode. This cell can be used for the spectroelectrochemical studies of electrochemical processes with larger negative reduction potentials and the electrochemical analysis of metallic ions.

关 键 词：汞膜 掺锡 三氧化二铟 光透电极 薄层电化学池 

分 类 号：O657.102[理学—分析化学]