掺杂In和PbI2的n-PbTe材料的研究  

Study on n-type PbTe material doped with In and PbI_2

作　　者：龙春泉[1] 于俊鹏[1] Y．Gelbstein 张建中[1] 

机构地区：[1]中国电子科技集团公司第十八研究所,天津300381 [2]以色列内盖夫区本-固立昂大学材料工程学院,以色列

出　　处：《电源技术》2009年第9期753-756,共4页Chinese Journal of Power Sources

摘　　要：在传统的掺杂卤族元素基础上掺杂一定的In元素,制备出高性能的n-PbTe基温差电材料;采用中频感应熔炼炉合金化得到均匀的基体,粉碎,然后在一定温度和压力下压制粉体得到样品锭块。测试了样品的热电性能,并且用场发射透射电镜对样品进行了微观分析,结果表明掺杂合适的PbI2和In后,可以改善材料的热电性能,在一个较宽的温度范围内材料优值都保持一个较高的值。Lead telluride is traditional thermoelectric material at middle temperature and widely applied for electricity generation. They have been attracting many scientists to research on. The paper reports an n-type PbTe materials with high thermoelectric performances based on the traditional halogen-doping mechanism with additional indium. The PbTe based materials doped indium and PbI2 are prepared by powder metallurgy technology. We use an intermediate frequency induced furnace for primary alloy preparation. The alloy shows very homogeneous with the desired composition. Then, the comminuted powder particles are hot pressed under certain temperature, pressure and so on. The authors examined the prepared samples by FETEM and measured their thermoelectric properties. The results indicate that doping with the appropriate PbI2 and indium improved the thermoelectric properties of the PbTe based materials remarkably, and we gained high figure of merit for the materials over a wide temperature range.

关 键 词：PbTe基材料 掺杂 热电性能 

分 类 号：TM913[电气工程—电力电子与电力传动]