采用真空镀膜制备的叠层结构有机场效应晶体管的研究  

On the organic field-effect transistors with laminated structure prepared by vacuum coating

作　　者：赵明[1] 李训栓[1] 宋长安[1] 马朝柱[1] 袁建挺[1] 汪润生[1] 李远飞[1] 张光辉[1] 郭晗[1] 叶早晨[1] 彭应全[1,2] 

机构地区：[1]兰州大学微电子研究所,甘肃兰州730000 [2]兰州大学磁学与磁性材料教育部重点实验室,甘肃兰州730000

出　　处：《真空》2009年第5期18-21,共4页Vacuum

基　　金：甘肃省自然科学基金资助项目;项目号0803RJZA104;磁学与磁性材料教育部重点实验室开放课题;项目号MMM200811

摘　　要：本文报道了一种叠层结构有机场效应管,它有别于一般的顶接触式和底接触式结构OFET。该器件采用真空镀膜制备,以SiO2作为绝缘层,酞菁铜CuPc作为沟道层。测量出其输出特性曲线,可看见较明显的场效应特性。对器件温度特性的研究表明,漏极电流随着温度的升高而增大。XRD分析表明,在Si/SiO2和Si/SiO2/Al两种衬底上蒸镀制备的CuPc薄膜呈多晶结构,且两种衬底上的CuPc薄膜晶粒尺度大致相等。A new laminated structure was applied to the organic field-effect transistors （OFETs）, which is different from the conventional top-contact and bottom-contact structures. With the vacuum film deposition process, SiO2 was taken as the insulation layer and CuPe as the channel layer. The measured output characteristic curves showed that the device exhibits unambiguous characteristics of field-effect. Investigation on the temperature characteristics showed that the drain current increases with the temperature. XRD analysis indicated that CuPc thin films deposited on both Si/SiO2 and Si/SiO2/Al substrates by vacuum evaporation coating are of polycrystalline structure, and the average grain size of the CuPc films deposited on the two different substrates is the same on the whole

关 键 词：真空镀膜 酞菁铜CuPc 叠层结构 有机场效应晶体管(OFET) 

分 类 号：TN303[电子电信—物理电子学] TB43[一般工业技术]