EMP模拟器用GTEM小室接头的优化设计  

Optimization Design of GTEM Cell Adapter for an EMP Simulator

作　　者：陈炜峰[1] 曹永娟[1] 周香[2] 

机构地区：[1]南京信息工程大学,南京210044 [2]东南大学电磁兼容研究室,南京210096

出　　处：《高电压技术》2009年第9期2102-2107,共6页High Voltage Engineering

摘　　要：为了提高GTEM传输室的耐高压能力,并保证良好的传输特性,对其馈电接头进行了优化设计。采用三维时域有限差分法(FDTD)建模分析,计算并讨论了一种常规小室接头的场分布和击穿电压;加聚四氟乙烯绝缘护套以提高耐压;用电磁场计算软件HFSS扫频计算此接头的驻波比特性并对斧形块和电缆连接器的结构尺寸进行了参数优化。计算分析表明接头圆形同轴段的最大场强为方形同轴段的3倍以上;瞬态脉冲输入时,加聚四氟乙烯绝缘护套后能承受的最大场强可提高到54kV/mm;接头的驻波比<1.3。测试表明,在30MHz到2.4GHz之间,GTEM小室驻波比都<1.6,模拟器产生的脉冲波形良好,50kV高压下未击穿,接头满足工程应用要求。Gigahertz transverse electromagnetic （ GTEM） cells for electromagnetic pulse simulator must be high voltage resistant and favorable transfer characteristic. A three-dimensional finite-difference time-domain （FDTD） representation of the GTEM adapter was described. The field contour and voltage standing wave ratio （VSWR） were presented after the results calculation. According to the field behavior, the breakdown strength was discussed. A high voltage GTEM adapter for an electromagnetic pulse {EMP） simulator was designed. And structure and size of its axe and cable linker were optimized by using HFSS based on the finite element method （FEM）. Computation and analysis show that the max. electric field intensity of circle coaxial section is more than triple of square section. By adding polyfluortetraethylene sheath between inner and outer conductor, adapter＇s max. breakdown strength can increase to 54 kV/mm when inputting transient pulse, and its VSWR is lower than 1. 3. Test results show that VSWR of GTEM cell with optimization adapter is lower 1.6 when frequency of input sine wave is between 30MHz to 2.4 GHz. The waveform generated by the EMP simulator is all right. The adapter satisfies the needs of engineering application.

关 键 词：吉赫兹横电磁波室 高电压 接头 电磁脉冲 模拟器 优化设计 

分 类 号：TN03[电子电信—物理电子学]