基于Zn_2SiO_4:Mn的成像器件紫外增强薄膜制备及表征  

Preparation and analysis of UV-enhanced Zn_2SiO_4:Mn films for image sensors

作　　者：倪争技[1] 刘猛[1] 张大伟[1] 黄元申[1] 庄松林[1] 

机构地区：[1]上海理工大学上海市现代光学系统重点实验室,上海200093

出　　处：《光学精密工程》2009年第9期2106-2111,共6页Optics and Precision Engineering

基　　金：国家科技部支撑计划资助项目(No.2006BAK03A03);上海市科委资助项目(No.07DZ22026;No.08530707400;No.08ZR1415400;No.08DZ2272800)

摘　　要：在CCD、CMOS等硅基光电成像器件的光敏面镀下变频薄膜将紫外波段的光变为可见波段的光,可实现CCD、CMOS等硅基光电成像器件的紫外响应。考虑Zn2SiO4∶Mn粒子直径小,稳定性好,荧光量子效率高等优点,本文用"旋涂法"在石英基底上生成Zn2SiO4∶Mn紫外增强薄膜,并对其透射光谱、吸收光谱、激发光谱与发射光谱等光学性质进行分析。实验测得薄膜在300 nm以下透过率极低并具有很强的吸收,在300 nm以上透过率很高且吸收很弱;激发峰在260 nm,发射峰在525 nm,可以实现将紫外光转化为可见光。分析了Zn2SiO4∶Mn薄膜的均匀性、厚度、稳定性等物理性质对其变频性能的影响。实验结果表明,利用Zn2SiO4∶Mn薄膜可以有效增强CCD等光电器件的紫外响应,实现光电器件的紫外探测。In order to enhance the UV-response of CCD ＆ CMOS detectors, Zn2SiO4： Mn phosphor with the properties of small particle sizes, well-stabilizing and high-luminescence quantum efficiencies was chosen as a film material to be coated on the surface of a CCD or a CMOS. The Zn2SiO4 ： Mn thin film on quartz substrates was prepared by the spin-coated method. The transmission spectrum, absorption spectrum, excitation and emission spectra of the Zn2SiO4 ： Mn thin-film were measured. The results indicate that the thin film has stable low transmission and high absorptivity when the waveband of illuminated light is less than 300 nm. Moreover, the excitation peak of the film is 260 nm and the emission peak is 525 nm, which is at the sensitive respond band of the CCD. Meanwhile, this experiment analyzed the effects of the thickness, smoothness and stability of the Zn2SiO4： Mn thinfilm on the frequency properties, the results show that the Zn2 SiO4 ： Mn thin-film is a kind of nice thin-film which can be used to enhance UV-response of CCD ＆. CMOS detectors.

关 键 词：成像器件 紫外响应 Zn2SiO4∶Mn薄膜 

分 类 号：O484.1[理学—固体物理]