混合应变多量子阱波导结构设计  

Waveguide Structure Design of Mixed Strained layer Multi-Quantun Well

作　　者：张哲民[1] 黄德修[1] 李同宁 

机构地区：[1]华中理工大学 [2]武汉电信器件公司

出　　处：《光通信研究》1998年第4期52-55,共4页Study on Optical Communications

摘　　要：本文从理论上对混合应变量子阱结构（既有张应变量子阱又有压应变量子阱）的光学限制因子进行了讨论。由于垒层宽度较小，其变化量也不大，对光学限制影响相对小一些。当各层的折射率一定时，对称和非对称结构的最佳波导层厚度差不多，限制因子与波导层厚度的关系也类似。在最佳波导层厚度附近的区域，ΓＴＭ／ΓＴＥ比值变化对波导层厚比较敏感，这点可以用于偏振无关放大器的设计中，因为我们能够通过调节波导层厚度改变ＴＭ／ＴＥ模式增益比。The polarization dependent optical confinement factor of waveguide structure with mixed strained layer multi quantum well has been discussed in this paper. Since the barrier width is relative small, its variation doesn't affect the optical confinement very much. If the refractive index of layers are fixed, the optimal widths of waveguiding layer (with the largest confinement factor) are the same for symmetry and unsymmetry waveguide structures. And near the optimal width, Γ TM /Γ TE is sensitive to waveguiding layer width. This can be used to design polarization insensitive semiconductor laser amplifiers.By adjusting the waveguiding layer width, we can change the ratio of gain between TM and TE modes.

关 键 词：量子阱 光学限制因子 光电器件 

分 类 号：TN36[电子电信—物理电子学]