Study on characteristics of a double-conductible channel organic thin-film transistor with an ultra-thin hole-blocking layer  

作　　者：袁广才 徐征 赵谡玲 张福俊 许娜 田雪雁 徐叙瑢 

机构地区：[1]Institute of Optoelectronics Technology,Beijing Jiaotong University [2]Key Laboratory of Luminescence and Optical Information(Beijing Jiaotong University),Ministry of Education [3]School of Sciences,Beijing Jiaotong University

出　　处：《Chinese Physics B》2009年第9期3990-3994,共5页中国物理B（英文版）

基　　金：supported by the National High Technology Research and Development Program of China (Grant No 2006AA03Z0412);the National Natural Science Foundation of China (Grant Nos 10774013 and 10804006);the Excellent Doctor’s Science and Technology Innovation Foundation of Beijing Jiaotong University (Grant No 48024);the Foundation of Beijing Jiaotong University (Grant No 2005SM057);the Research Fund for the Youth Scholars of the Doctoral Program of Higher Education (Grant No 20070004031);the Beijing NOVA program (Grant No 2007A024);Sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry

摘　　要：The properties of top-contact organic thin-film transistors （TC-OTFTs） using ultra-thin 2, 9-dimethyl-4, 7- diphenyl-1, 10-phenanthroline （BCP） as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers arc limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at VDS = --20 V showed excellent hole mobility μFE and threshold voltage VTH of 0.58 cm^2/（V-s） and -4.6 V, respectively.The properties of top-contact organic thin-film transistors （TC-OTFTs） using ultra-thin 2, 9-dimethyl-4, 7- diphenyl-1, 10-phenanthroline （BCP） as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers arc limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at VDS = --20 V showed excellent hole mobility μFE and threshold voltage VTH of 0.58 cm^2/（V-s） and -4.6 V, respectively.

关 键 词：organic thin-film transistor ultra-thin hole-blocking layer double-conductible channels 

分 类 号：TN321.5[电子电信—物理电子学]