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出 处:《地质学刊》2009年第3期239-244,共6页Journal of Geology
摘 要:通过对硅的迁移形式和条件、苏北东海水晶矿床中石英流体包裹体的化学成分、部分飘动气体自然、晶洞与水晶的密切相关性以及水晶的共生伴生矿物等的研究,提出该矿床的形成机制为:在地球深部高温高压强还原富氢环境下,硅呈气态硅氢络合物活化并纯化、迁移至地壳浅部低温低压氧化环境,硅氢化物较快氧化形成石英脉,并在有利部位形成石英外壳(晶洞壳),晶洞内的硅氢化物在温和稳定环境中缓慢氧化,并自由结晶分异纯化形成水晶矿床。Through studies of silicon migration forms and conditions, chemical components of crystal fluid inclusion in Donghai crystal deposit, affinity of drusy cavity and crystal as well as the coexisting minerals and associated minerals of crystal, the authors brought forward the genetic mechanism of crystal deposit: under conditions of reduction hydrogen-rich environment of high temperature and pressure in the depth of the earth, silicon was activated and purified in a mode of gaseous silicon-hydrogen complex and migrated upto shallow crust that was under a environment of low temperature and pressure, silicon oxide was oxidized rapidly and formed crystal veins, crystal crust (drusy cavity) was formed along favorable portions, silicon hydride in the drusy cavity was oxidized smoothly under warm and stable environment, the crystal deposit was formed through free crystallization, differentiation and purification of the silicon hydride.
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