Structural phase transition behaviour of Zn_4Sb_3 and its substitutional compounds (Zn_(0.98)M_(0.02))_4Sb_3 (M = Al, Ga and In) at low temperatures  

Structural phase transition behaviour of Zn_4Sb_3 and its substitutional compounds (Zn_(0.98)M_(0.02))_4Sb_3 (M = Al, Ga and In) at low temperatures

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作  者:刘峰 秦晓英 刘冕 

机构地区:[1]Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences [2]Department of Applied Mathematics and Physics, Anhui University of Science and Technology

出  处:《Chinese Physics B》2009年第10期4386-4392,共7页中国物理B(英文版)

基  金:Project supported by the National Natural Science Foundation of China (Grant No 10774145)

摘  要:Structural phase transitions of Zn4Sb3 and its substitutional compounds (Zn0.98M0.02)4Sb3 (M = Al, Ga and In) are investigated by electrical transport measurement and differential scanning calorimetry below room temperature. The results indicate that both β→α and α→α′ phase transitions of Zn4Sb3 are reversible and exothermic processes, which may be explained as that both the transitions originate from the ordering of the disordered interstitial Zn and vacancies in regular sizes. The derived activation energies of β→α and α→α′ phase transition processes for Zn4Sb3 are E1 = 3.9 eV and E2 = 4.1 eV, respectively. Although no remarkable influence on activation energy E2 is observed after A1 doping, A1 substitution for Zn causes E1 to increase to 4.6 eV, implying its suppression of β←→α transition to a great extent. Moreover, it is found that both β←→α and α←→α′ transitions are completely prohibited by substitution of either In or Ga for Zn in Zn4Sb3. The underlying mechanisms for these phenomena are discussed.Structural phase transitions of Zn4Sb3 and its substitutional compounds (Zn0.98M0.02)4Sb3 (M = Al, Ga and In) are investigated by electrical transport measurement and differential scanning calorimetry below room temperature. The results indicate that both β→α and α→α′ phase transitions of Zn4Sb3 are reversible and exothermic processes, which may be explained as that both the transitions originate from the ordering of the disordered interstitial Zn and vacancies in regular sizes. The derived activation energies of β→α and α→α′ phase transition processes for Zn4Sb3 are E1 = 3.9 eV and E2 = 4.1 eV, respectively. Although no remarkable influence on activation energy E2 is observed after A1 doping, A1 substitution for Zn causes E1 to increase to 4.6 eV, implying its suppression of β←→α transition to a great extent. Moreover, it is found that both β←→α and α←→α′ transitions are completely prohibited by substitution of either In or Ga for Zn in Zn4Sb3. The underlying mechanisms for these phenomena are discussed.

关 键 词:Zn4Sb3 differential scanning calorimetry phase transition 

分 类 号:O481[理学—固体物理]

 

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