Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber  

作　　者：张晓丹 孙福和 魏长春 孙建 张德坤 耿新华 熊绍珍 赵颖 

机构地区：[1]Institute of Photo-Electronics, Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-Electronics,Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology (Nankai University), Ministry of Education

出　　处：《Chinese Physics B》2009年第10期4558-4563,共6页中国物理B（英文版）

基　　金：Project supported by Hi-Tech Research and Development Program of China (Grant No 2007AA05Z436);Science and Technology Support Project of Tianjin (Grant No 08ZCKFGX03500);National Basic Research Program of China (Grant Nos 2006CB202602 and 2006CB202603);National Natural Science Foundation of China (Grant No 60506003);Starting Project of Nankai University (Grant No J02031);International Cooperation Project Between China-Greece Government (Grant No 2006DFA62390);Program for New Century Excellent Talents in University of China (NCET)

摘　　要：This paper studies boron contamination at the interface between the p and i layers of μc-Si：H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μc-Si：H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μc-Si：H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.This paper studies boron contamination at the interface between the p and i layers of μc-Si：H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μc-Si：H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μc-Si：H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.

关 键 词：boron contamination single chamber microcrystalline silicon solar cells 

分 类 号：TM914.4[电气工程—电力电子与电力传动]