强磁场下真空蒸发Zn薄膜晶粒细化研究  

Grain Size Distribution and High Magnetic Filed in Zn film Growth by Vacuum Deposition

作　　者：任树洋[1] 任忠鸣[1] 任维丽[1] 操光辉[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《真空科学与技术学报》2009年第5期470-473,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金(No.50671060)资助

摘　　要：分别在1T,2T和3T强磁场下采用真空蒸发沉积制备了三种相同厚度的Zn薄膜,并和无磁场下制备的薄膜进行了对比研究。SEM对薄膜表面形貌研究发现,施加磁场制备的Zn薄膜表面晶粒要比无磁场条件下制备的薄膜有明显的细化作用。对磁场下Zn原子团形成进行了热力学分析,推导了磁场作用下的临界形核半径r*M和临界形核自由能ΔGM*,引入了磁场对临界形核自由能作用因子fM。对磁场导致晶粒形核能的变化以及形核浓度的影响作了深入分析,r*M和ΔG*M减小从而增加临界形核浓度和形核速率是Zn晶粒细化的原因。另外,磁场对扩散的抑制作用也对晶粒细化起到了作用。The Zn films, of the same thickness, were grown by vacuum deposition in different high magnetic fields, ranging from I T to 3 T. The microstructurcs of the films, grown with or without high magnetic fields, were characterized with X-ray diffraction（XRD）,scanning electron microscopy（SEM）. The dynamics of Zn cluster formation and the influence of the high magnetic field on the Zn grain size were studied. The results show that the high magnetic field strongly reduces the Zn grain sizes. The critical nucleation radius, rM ,and its Gibbs free energy, △GM, were defined, respective- ly,and an impact factor,fM,was introduced to evaluate the impact of the magnetic field on the free energy of thc critical nucleation. Possible mechanisms of Zn grain refinement by high magnetic field was discussed in a thought provoking way.

关 键 词：强磁场 晶粒细化 真空蒸发沉积 薄膜 

分 类 号：O484.1[理学—固体物理]