Co掺杂对CeO_2显微结构及磁性能的影响  

Effects of Co Dopant on the Microstructure and Magnetic Properties of CeO_2 at Room Temperature

作　　者：杨许文[1] 宋远强[1] 张怀武[1] 苏桦[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《磁性材料及器件》2009年第5期21-25,29,共6页Journal of Magnetic Materials and Devices

摘　　要：近年来宽禁带稀磁性氧化物半导体由于其高的居里温度在自旋电子学领域受到广泛的关注。用固相反应法制备Co掺杂的CeO2稀磁性氧化物半导体,研究了Co掺杂对其显微形貌及磁性能的影响。结果表明,1300℃烧结的样品结晶形态明显,晶粒较大,结构致密,密度最高;掺杂Co的CeO2样品都具有很好的室温铁磁性,且饱和磁化强度Ms随Co浓度的增加先增大后减小;1300℃烧结、掺3at%Co的Ce0.97Co0.03O2具有最强的室温铁磁性(0.23μB/Co)。Diluted magnetic oxide materials with wide band-gap have received enormous attention in the area of spin-electronics due to their high Curie temperatures. Co-doped CeO2 diluted magnetic oxide semiconductor material was prepared using solid-state reaction method, and the effects of Co dopant were investigated on the microstructure and magnetic properties of CeO2 at room temperature. The results indicated that samples sintered at temperature of 1300℃ exhibit the optimal morphology with large grain size and sintering density. Further more, all the Co-doped CeO2 samples exhibit ferromagnetism, and the saturation magnetization is correlated with the Co concentration. For the samples sintered at 1300℃, the saturation magnetization increases first and then gradually decreases with increasing Co content. The largest saturation magnetization （0.23μB/Co） was obtained in the sample with nominal stoiehiometry of Ce0.97Co0.03O2.

关 键 词：稀磁氧化物半导体 Co掺杂CeO2 微结构 磁性能 

分 类 号：TN304.7[电子电信—物理电子学]