张应力退火对玻璃包覆钴基非晶丝GMI影响  

Effect of tension annealing on giant magneto-impedance in glass-covered Co-rich amorphous wire

作　　者：田斌[1,2] 马强[2] 梁培[2] 江建军[2] 

机构地区：[1]武汉工程大学电气信息学院,湖北武汉430074 [2]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《电子元件与材料》2009年第10期1-3,共3页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.50371029);新世纪优秀人才支持计划资助项目(No.NCET-04-0702)

摘　　要：采用张应力–焦耳热方式对玻璃包覆钴基非晶丝进行退火,测量其退火后的磁滞回线和磁阻抗值,研究张应力退火对玻璃包覆钴基非晶丝静磁性能和巨磁阻抗(GMI)效应的影响。结果表明:通过处理,其各向异性场降低,其中经140MPa张应力退火的样品GMI峰值最大可达80%,所对应的磁场强度降至60A/m。随着玻璃包覆钴基非晶丝内应力的改变,导致样品壳内畴的体积增加,引起应力感生横向各向异性,从而影响GMI效应。The glass-covered Co-rich amorphous wires were annealed by tension-joule heat annealing process. The influences of tension annealing on the magnetostatic properties and giant magneto-impedance （GMI） effect were investigated by measuring hysteresis loop and magneto-impedance value after annealing. The results show that the magentic anisotropy field is reduced by the annealing treatments, furthermore, the maximum GMI value is increased to 80% and the magnetic field strength corresponding to the maximum GMI value is decreased to 60 A/m. The GMI value is enhanced by increasing the sample shell inner domain volume and inducing a transverse anisotropy due to the changing of inner stress in glass-covered Co-rich amorphous wires.

关 键 词：巨磁阻抗 磁畴 内应力 非晶态 

分 类 号：TB383[一般工业技术—材料科学与工程]