掺杂Fe_2O_3对氧化钒相变的影响  

Influence of Fe_2O_3 doping on the phase change of VO_2

作　　者：孙健[1] 李娜[1] 刘英 

机构地区：[1]南京师范大学电气与自动化工程学院,江苏南京210042 [2]江苏兴顺电子元件厂,江苏兴化225700

出　　处：《电子元件与材料》2009年第10期25-27,共3页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.2005111GZ3B341)

摘　　要：用电子陶瓷工艺制备了三种不同掺杂比例的临界热敏电阻CTR(Critical Temperature Resister),根据样品对应的热谱中的相变点,找出Fe2O3掺杂量与相变点的关系。从微观半导体理论分析晶粒体电特性,求解泊松方程,得出晶粒体中电势垒与受主杂质Fe2O3掺杂量的关系。结果表明:当x(Fe2O3)为10%～25%时,相变温度增加值?t和摩尔分数增加值(?x)2呈线性关系。Three kinds of critical temperature resistor （CTR） with various dopant contents were prepared with the electronic ceramic technology. Based on the DSC thermograms of prepared CTR samples, the relation between the doping amount of Fe2O3 and the phase transition point of CTR was determined. The electrical characteristics of crystal grains contained in prepared CTR were analyzed using the microscopic semiconductor theory. And the relation between the electrical potential barrier and the doping amount of aeceptor impurity Fe2O3 was determined for crystal grains through solving the Poisson＇s equation. The results show that, when the content of Fe203 is in the range of 10wt%-25wt%, the change in the phase transition temperature of CTR, At, is proportional to the square of change in the mole fraction of Fe2O3, （△x）^2.

关 键 词：CTR P2O5 Fe2O3掺杂量 VO2 相变 

分 类 号：TQ135.1[化学工程—无机化工]