氢气流量对定向碳纳米管生长的影响及其生长机理研究  

The effect of different H_2 flow on the growth of aligned carbon nanotubes and study on its growth mechanism

作　　者：耿梅艳[1] 王海燕[1] 邹上荣[1] 胡晓阳[1] 沈金虎[1] 穆慧慧[1] 

机构地区：[1]郑州大学材料物理教育部重点实验室,郑州450052

出　　处：《化工新型材料》2009年第9期86-88,共3页New Chemical Materials

摘　　要：采用催化热解法,以二茂铁和二甲苯分别作为催化剂和碳源,在不同H2流量下,直接在硅基底上生长定向碳纳米管阵列。采用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和拉曼光谱(Raman)对样品进行观察和表征,并研究了H2流量对定向碳纳米管生长的影响和碳纳米管定向生长的机理。结果表明:H2在反应过程中起刻蚀作用,H2流量为60cm3/min时,生长的碳纳米管定向性最好。Well-aligned carbon nanotubes were directly synthesized in the silicon substrate by catalytic decomposition, in different H2 flow. In this experiment, xylene was used as the carbon source with ferrocene as the catalyst precursor. The products were characterized by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and Raman spectroscopy. The effect of different H2 flow on the growth of aligned carbon nanotubes and the growth mechanism of aligned carbon nanotubes were also studied. The results showed that H2 played a etching role in the process, the well-aligned carbon nanotubes have been obtained in the H2 flow 60cm^3/min.

关 键 词：碳纳米管 定向生长 催化热解法 机理 

分 类 号：TB383.1[一般工业技术—材料科学与工程]