化学浴沉积PbSe多晶薄膜及其光电性能初探  

PbSe Polycrystalline Film by Chemical Bath Deposition and It’s Photoelectricity Properties

作　　者：陈凤金[1] 司俊杰[1] 姚官生[1] 张庆军[1] 

机构地区：[1]中国空空导弹研究院,河南洛阳471003

出　　处：《红外技术》2009年第10期610-613,共4页Infrared Technology

基　　金：国家航空科学基金自由申请类项目(No.2007ZC12003)

摘　　要：分别以硒脲和硒粉为Se2-制备剂的主要原料,用化学浴沉积法制备了PbSe多晶薄膜。对所制备薄膜用形貌、XRD、TEM和红外透射谱等方法进行表征分析。两种制备方法均获得了结晶度良好的PbSe多晶薄膜。以硒粉所制备的PbSe薄膜颗粒度为1μm,以硒脲所制备的薄膜颗粒度为0.3μm,小颗粒薄膜出现红外吸收限蓝移现象。测得由所制备的薄膜得到的PbSe光导型探测器原型器件的电压响应率为1200 V/W。PbSe polycrystalline thin films were synthesized on quartz glass by chemical bath deposition （CBD） with selenourea and selenium, individually. The PbSe thin films were analyzed by SEM, XRD, infrared transmission and TEM. Both films were of good crystallinity. Granularity of the film obtained with selenium was 1.0 μm, while that obtained with selenourea was 0.3 μm. The absorption edge has an obvious blue shift. Proto-type PbSe photoconductive detector was fabricated and its photo-voltage responsivity was 1200 V/W.

关 键 词：硒化铅 化学浴沉积 多晶薄膜 光电性能 

分 类 号：TN213[电子电信—物理电子学]