丝网印刷纳米ZnO薄膜阴极场致发射的研究  

Study of Screen-printed ZnO Film for Field Emission Cathode

作　　者：张秀霞[1] 魏舒怡[2] 朱长纯[3] 

机构地区：[1]北方民族大学电信学院,银川750021 [2]中国科学院研究生院,北京100049 [3]西安交通大学电子与信息工程学院,西安710049

出　　处：《材料导报》2009年第20期17-19,28,共4页Materials Reports

基　　金：国家自然科学基金项目(60844006);国家民委项目(08XBE07);宁夏自然科学基金项目(NZ0884);宁夏高等学校科学研究项目(2008JY002)

摘　　要：鉴于化学气相沉积生长方法成本高且很难制备出大面积均匀的纳米ZnO薄膜,采用成本低的丝网印刷方法制备了大面积纳米ZnO阴极薄膜。测试研究了分散、热烧结、退火处理对ZnO薄膜的场致发射特性的影响,提出了低成本丝网印刷制备大面积ZnO薄膜阴极热烧结和退火处理的工艺,根据样品的形貌、发射特性和均匀稳定发光的阳极可以判断,最高温度843K的热烧结和823K、10min的退火处理适实用于制作大面积纳米ZnO薄膜场致发射阴极。The large area of nano-ZnO film can＇t be received by CVD growth for high cost. Lower cost screen-printed large area nano-ZnO film cathode is fabricated. The influence factors of field emission characteristic of nano-ZnO film is tested and studied. According to the morphology of cathode samples and stability and uniformity of the anode luminescent, the technics of thermal sintering and annealing treatment of lower cost screen-printed large area are presented. The advantaged thermal sinter temperature for nano-ZnO film field emission is 843K, the condign annealing temperature and time are 823K and 10min. The optimal thermal sintering and annealing treatment intentionally improve the electron field emission and can be used in fabricating the nano-ZnO film cathode of field emission.

关 键 词：丝网印刷 纳米ZNO薄膜 场致发射冷光源 

分 类 号：O484.4[理学—固体物理] TN304.21[理学—物理]