ZnO纳米线的制备及场发射特性的研究进展  

Research Progress in ZnO Nanowires and Field Emission Properties

作　　者：陈伟中[1] 王属霞[1] 贺叶露[1] 

机构地区：[1]重庆大学数理学院应用物理系,重庆400044

出　　处：《材料导报》2009年第19期20-23,27,共5页Materials Reports

摘　　要：从ZnO纳米线的生长机制出发,重点讨论了催化剂在制备过程中的作用,比较了采用VLS和VS不同机制生长ZnO纳米线的优缺点,并结合二者特点发现采用金属自催化将是制备高质量ZnO纳米线阵列的一种有效方法。分析了几种有利于提高其场发射性能的后处理方法,经过适当的后处理ZnO纳米线晶体的结构将更加完善,场发射开启场、阈值场将进一步降低,电流密度和场增强因子也将随之大大提高。The key role of catalyst in the growth mechanism of ZnO nanowires is discussed. Different growth mechanisms have their unique advantages and disadvantages. Metal self-catalysis is a good way to prepare high-quality ZnO nanowire arrays. In addition, several post-processing factors on field emission properties of ZnO nanowire are also introduced in detail. After proper treatments the field emission properties of ZnO nanowire will be further improved.

关 键 词：ZNO纳米线 催化剂 场发射 

分 类 号：TB383[一般工业技术—材料科学与工程] TN304.21[电子电信—物理电子学]