Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films  

作　　者：丁武昌 左玉华 张云 郭剑川 成步文 余金中 王启明 郭亨群 吕蓬 申继伟 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences [2]College of Information Science and Engineering, Huaqiao University

出　　处：《Journal of Semiconductors》2009年第10期1-4,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.60336010);the State Key Development Program for Basic Research of China(No.2006CB302802)

摘　　要：Er-doped silicon-rich silicon nitride （SRN） films were deposited on silicon substrate by an RF magnetron reaction sputtering system. After high temperature annealing, the films show intense photoluminescence in both the visible and infrared regions. Besides broad-band luminescence centered at 780 nm which originates from silicon nanocrystals, resolved peaks due to transitions from all high energy levels up to 2H11/2 to the ground state of Er^3＋ are observed. Raman spectra and HRTEM measurements have been performed to investigate the structure of thefilms, and possible excitation processes are discussed.Er-doped silicon-rich silicon nitride （SRN） films were deposited on silicon substrate by an RF magnetron reaction sputtering system. After high temperature annealing, the films show intense photoluminescence in both the visible and infrared regions. Besides broad-band luminescence centered at 780 nm which originates from silicon nanocrystals, resolved peaks due to transitions from all high energy levels up to 2H11/2 to the ground state of Er^3＋ are observed. Raman spectra and HRTEM measurements have been performed to investigate the structure of thefilms, and possible excitation processes are discussed.

关 键 词：PHOTOLUMINESCENCE silicon nitride Er doping 

分 类 号：TN304[电子电信—物理电子学]