Effects of Homo-buffer Layer on Properties of Sputter-deposited ZnO Films  

作　　者：Jian Huang Linjun Wang Run Xu Weimin Shi Yiben Xia 

机构地区：[1]School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China

出　　处：《Journal of Materials Science & Technology》2009年第5期691-694,共4页材料科学技术（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.60877017);Program for Changjiang Scholars and Innovative Research Team in University(No.IRT0739);Shanghai Leading Academic Disciplines(S30107);Innovation Program of Shanghai Municipal Education Commission(No.08YZ04)

摘　　要：Two-step growth regimes were applied to realize a homoepitaxial growth of ZnO films on freestanding diamond substrates by radio-frequency （RF） reactive magnetron sputtering method. ZnO buffer layers were deposited on freestanding diamond substrates at a low sputtering power of 50 W, and then ZnO main layers were prepared on this buffer layer at a high sputtering power of 150 W. For comparison, a sample was also deposited directly on freestanding diamond substrate at a power of 150 W. The effects of ZnO buffer layers on the structural, optical, electrical and morphological properties of the ZnO main layer were studied by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, Raman spectroscopy, semiconductor characterization system and atomic force microscopy （AFM） respectively. The experimental results suggested that homo-buffer layer was helpful to improve the crystalline quality of ZnO/diamond heteroepitaxial films.Two-step growth regimes were applied to realize a homoepitaxial growth of ZnO films on freestanding diamond substrates by radio-frequency （RF） reactive magnetron sputtering method. ZnO buffer layers were deposited on freestanding diamond substrates at a low sputtering power of 50 W, and then ZnO main layers were prepared on this buffer layer at a high sputtering power of 150 W. For comparison, a sample was also deposited directly on freestanding diamond substrate at a power of 150 W. The effects of ZnO buffer layers on the structural, optical, electrical and morphological properties of the ZnO main layer were studied by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, Raman spectroscopy, semiconductor characterization system and atomic force microscopy （AFM） respectively. The experimental results suggested that homo-buffer layer was helpful to improve the crystalline quality of ZnO/diamond heteroepitaxial films.

关 键 词：Freestanding diamond ZnO film Buffer layer Magnetron sputtering 

分 类 号：TN304.23[电子电信—物理电子学] TN304.21