甲壳素修饰碳糊电极测定痕量铜  

Determination of Trace Copper by Chitin Modified Carbon Paste Electrode

作　　者：兰雁华[1] 陆光汉[1] 姚胜来[1] 宋丰[1] 

机构地区：[1]华中师范大学化学系,武汉430079

出　　处：《分析化学》1998年第10期1192-1195,共4页Chinese Journal of Analytical Chemistry

基　　金：湖北省自然科学基金

摘　　要：报道了采用甲壳素修饰碳糊电极测定痕量铜的方法。通过开路富集，Ｃｕ２＋和甲壳素形成络合物富集于电极表面，然后经介质交换，电位还原再进行阳极溶出伏安测定。在浓度为 ３．０ × １０－９－ ９． ０ × １０－７ ｍｏｌ／Ｌ范围内，峰电流与痕量铜浓度呈线性关系，检测限为 １．０×１０－９　ｍｏｌ／Ｌ。同时，对电极反应的机理进行了讨论。A carbon paste electrode chemically modified with chitin was used for the selective accumulation of copper (Ⅱ). The copper (Ⅱ ) was accumulated on the eletrode surface by the formation of the complex in an open circuit and then the resulting surface was characterized by medium exchange, potential deduction and then determined by anodic stripping voltammetry. The peak current is directly proportional to the concentration of copper(Ⅱ) over the range 3 .0 × 10-9 - 9. 0 × 10-7 mol/L. The detection limit is 1 .0 × 10-9 mol/L. The mechanism of electrode reaction was also discussed.

关 键 词：铜 甲壳素 碳糊修饰电极 伏安法 富集 分析 

分 类 号：O614.129[理学—无机化学]