非晶态Ti-B-N薄膜的制备及晶化研究  

Study on Synthesization and Crystallization of Amorphous Ti B N Thin Films

作　　者：李戈扬[1] 王公耀 李鹏兴[1] 王纪文[2] 王永瑞 

机构地区：[1]上海交通大学金属基复合材料国家重点实验室 [2]上海交通大学高温材料及高温测试教育部开放实验室

出　　处：《材料工程》1998年第10期19-21,29,共4页Journal of Materials Engineering

摘　　要：采用双靶轮流溅射技术，以Ｔｉ和六方氮化硼（ｈ－ＢＮ）反应合成Ｔｉ－Ｂ－Ｎ薄膜，并采用ＸＲＤ、ＴＥＭ和显微硬度计研究薄膜的微结构及其力学性能。结果表明，镀态Ｔｉ－Ｂ－Ｎ薄膜为非晶体Ｔｉ（Ｎ，Ｂ）化合物，其硬度达到ＨＫ２４７０；薄膜经过热处理晶化形成ＴｉＮ结构类型的Ｔｉ（Ｎ，Ｂ）晶体，硬度略有降低。Ti B N films were synthesized by alternative deposition of Ti and h BN through substrate rotation in multi target magnetron sputtering system The microstructure and mechanical properties of films were studied by XRD, TEM and microindentor It is shown that deposited Ti B N films exists as amorphous Ti(N,B) compound and the hardness reaches HK2470 After crystallization, Ti B N films consist of Ti(N, B)crystal existed in TiN like structure and the hardness decreases a little

关 键 词：多靶磁控溅射 晶化 钛-硼-氮 薄膜制备 

分 类 号：O484.1[理学—固体物理] TB43[理学—物理]