Circuit-level simulation of the hysteresis inversion frequency of the ferroelectric liquid crystals  

作　　者：王梦瑶 

机构地区：[1]School of Information Science & Technology,Laboratory of Optical Communications,Southwest Jiaotong University

出　　处：《High Technology Letters》2009年第3期315-318,共4页高技术通讯（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.10174057;90201011);the Key Project of Chinese Ministry of Education(No.2005-105148);the Research Fund for the Doctoral Program of Higher Education of China(No.20070613058)

摘　　要：The V-shaped electro-optical properties control is investigated by an equivalent circuit model.Simu-lation results show that genuine V-shaped form is only observed at hysteresis inversion frequency,and be-low and above this frequency an anomalous and normal hysteresis are observed.And the inversion fre-quency decreases with the resistance of ferroelectric liquid crystal(FLC)layer following logf_i=-alogR_(LC)+b .The results are in good accordance with the reported experimental results.The V-shaped electro-optical properties control is investigated by an equivalent circuit model. Simu- lation results show that genuine V-shaped form is only observed at hysteresis inversion frequency, and be- low and above this frequency an anomalous and normal hysteresis are observed. And the inversion fre- quency decreases with the resistance of ferroelectric liquid crystal （FLC） layer following logfi = - alogRLc ＋ b. The results are in good accordance with the reported experimental results.

关 键 词：ferroelectric liquid crystal （FLC） thresholdless switching V-SHAPED circuit model hysteresis inversion frequency 

分 类 号：TM221[一般工业技术—材料科学与工程]