Preparation of ZnO Thin Films on Free-Standing Diamond Substrates  

作　　者：唐可 王林军 黄健 徐闰 赖建明 王俊 闵嘉华 史伟民 夏义本 

机构地区：[1]School of Materials Science and Engineering Shanghai University

出　　处：《Plasma Science and Technology》2009年第5期587-591,共5页等离子体科学和技术（英文版）

基　　金：National Natural Science Foundation of China (Nos.60577040,60877017);Program for Changjiang Scholars,Innovative Research Team in University of China (No.IRT0739);Innovation Program of Shanghai Municipal Education Commission of China (08YZ04);Shanghai Leading Academic Disciplines of China (S30107)

摘　　要：Highly c-axis-oriented ZnO films were deposited successfully on the nucleation sides of free-standing diamond （FD） films by the direct current （DC） magnetron sputtering method. The effect of the sputtering parameters, such as power, gas pressure and sputtering plasma composition of Ar-to-O2, on the properties of ZnO thin films was investigated in detail. X-ray diffraction （XRD） measurements showed that, at a sputtering power of 200 W, gas pressure of 0.5 Pa and an Ar-to- O2 composition of 1：1, a higher intensity of the （002） diffraction peak and a narrower full width at half maximum （FWHM） were detected which meant high c-axis orientation and high quality of the ZnO films. To improve the quality of the ZnO film, a thin ZnO layer was pre-grown as a homo-buffer layer. XRD measurements showed that this buffer layer had a beneficial effect on the structural and morphological properties of the post-grown ZnO film.Highly c-axis-oriented ZnO films were deposited successfully on the nucleation sides of free-standing diamond （FD） films by the direct current （DC） magnetron sputtering method. The effect of the sputtering parameters, such as power, gas pressure and sputtering plasma composition of Ar-to-O2, on the properties of ZnO thin films was investigated in detail. X-ray diffraction （XRD） measurements showed that, at a sputtering power of 200 W, gas pressure of 0.5 Pa and an Ar-to- O2 composition of 1：1, a higher intensity of the （002） diffraction peak and a narrower full width at half maximum （FWHM） were detected which meant high c-axis orientation and high quality of the ZnO films. To improve the quality of the ZnO film, a thin ZnO layer was pre-grown as a homo-buffer layer. XRD measurements showed that this buffer layer had a beneficial effect on the structural and morphological properties of the post-grown ZnO film.

关 键 词：ZnO free-standing diamond films homo-buffer layer direct current （DC）magnetron sputtering 

分 类 号：O484.1[理学—固体物理]