p种子层对单室制备微晶硅电池性能的影响  

Effects of p-seeding layer on the performance of microcrystalline silicon solar cells deposited in single chamber

作　　者：王光红[1] 张晓丹[1] 许盛之[1] 孙福河[1] 岳强[1] 魏长春[1] 孙建[1] 耿新华[1] 熊绍珍[1] 赵颖[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,光电信息技术科学教育部重点实验室,光电子薄膜器件与技术天津市重点实验室,天津300071

出　　处：《物理学报》2009年第10期7294-7299,共6页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2006CB202602,2006CB202603);国家自然科学基金(批准号:60506003);南开大学博士科研启动基金(批准号:J02031);科技部国际合作计划重点项目(批准号:2006DFA62390);国家高技术研究发展计划(批准号:2007AA05Z436);天津市科技支撑计划(批准号:08ZCKFGX03500);教育部新世纪优秀人才支持计划(批准号:NCET60506003)资助的课题~~

摘　　要：采用单室等离子体化学气相沉积技术沉积pin微晶硅电池时,硼污染降低了本征材料的晶化率并影响了p/i界面特性.针对该问题文中采用p种子层技术,即在沉积p层后采取高的H2/SiH4比率及适当的功率又沉积一个薄的p层,初步研究了p种子层对微晶硅i层纵向均匀性及电池性能的影响.实验结果表明:采用此方法能改善p/i界面特性,提高本征材料纵向结构的均匀性并降低硼对本征层的污染,有效地提高单结微晶硅电池的性能.最后,通过优化沉积条件,制备得到光电转换效率为8.81%(1cm2)的非晶/微晶硅叠层电池.The p-i-n type μc-Si：H solar cells were prepared in a single chamber using very high frequency plasma enhanced chemical vapor deposition technique.Boron cross-contamination between p-layer and subsequent i-layer seriously affects the device performance.The effects of p-seeding on the μc-Si：H i-layers and performance of μc-Si：H solar cells were investigated.The p-seeding method was mainly realized by relatively high hydrogen rich plasma.It has been demonstrated that p-seeding can improve the characteristics of p/i interface and the vertical uniformity of the intrinsic layer and reduce boron contamination. Through the optimization of p-seeding layer technique, a-Si： H/μc-Si： H tandem solar cell with 8.81% （1 cm2） conversion efficiency has been fabricated in single chamber.

关 键 词：单室 甚高频等离子体增强化学气相沉积 微晶硅太阳电池 p种子层 

分 类 号：TM914.4[电气工程—电力电子与电力传动]