Equivalent Method of Solving Quantum Efficiency of Reflection-Mode Exponential Doping GaAs Photocathode  

作　　者：牛军 杨智 常本康 

机构地区：[1]Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094 [2]Department of Electronic and Electric Engineering, Nanyang Institute of Technology, Nanyang 473004

出　　处：《Chinese Physics Letters》2009年第10期99-101,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 60678043.

摘　　要：The mathematical expression of the electron diffusion and drift length LDE of exponential doping photocathode is deduced. In the quantum efficiency equation of the reflection-mode uniform doping cathode, substituting LDE for LD, the equivalent quantum efficiency equation of the reflection-mode exponential doping cathode is obtained. By using the equivalent equation, theoretical simulation and experimental analysis shows that the equivalent index formula and formula-doped cathode quantum efficiency results in line. The equivalent equation avoids complicated calculation, thereby simplifies the process of solving the quantum efficiency of exponential doping photocathode.The mathematical expression of the electron diffusion and drift length LDE of exponential doping photocathode is deduced. In the quantum efficiency equation of the reflection-mode uniform doping cathode, substituting LDE for LD, the equivalent quantum efficiency equation of the reflection-mode exponential doping cathode is obtained. By using the equivalent equation, theoretical simulation and experimental analysis shows that the equivalent index formula and formula-doped cathode quantum efficiency results in line. The equivalent equation avoids complicated calculation, thereby simplifies the process of solving the quantum efficiency of exponential doping photocathode.

关 键 词：Electronics and devices Optics quantum optics and lasers Condensed matter: structural mechanical & thermal 

分 类 号：TN15[电子电信—物理电子学] TN383.1