Cu Doping Effect on Electrical Resistivity and Seebeck Coefficient of Perovskite-Type LaFeO3 Ceramics  

作　　者：王洪超 王春雷 张家良 赵明磊 刘剑 苏文斌 尹娜 梅良模 

机构地区：[1]School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100

出　　处：《Chinese Physics Letters》2009年第10期155-158,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant No 2007CB607504, and the National Natural Science Foundation of China under Grant No 50572052.

摘　　要：Perovskite-type LaFe1-xCuxO3 （x= 0.10, 0. 14, 0.18） solid solution is prepared with the conventional solid-state reaction technique. The electrical resistivity and the Seebeck coefficient are measured in the temperature range 473-1073 K to elucidate the Cu doping effect on the thermoelectrie properties of the LaFeO3. The electrical resisitivity of LaFe1-xCuxO3 shows semicondueting behavior. The temperature dependence of the electrical resistivity indicates that the adiabatic small-polaron hopping mechanism is dominant for their electric transportations. The activation energy decreases with the increasing Cu content as well as the increasing temperature. The Seebeck coefficient changes from a negative value to a positive value around 510 K, and increases with rising temperature up to 710K, then becomes saturated around 200 μ V/K. The Seebeek coefficient decreases with the substitution of Cu atoms in the temperature range of 573-1073 K, while the electrical resistivity decreases with the substitution of Cu atoms in the whole measured temperature. Overall the power factor increases with rising temperature, and the highest value of power factor is 54μW/K^2m for x = 0.10 of Cu doping.Perovskite-type LaFe1-xCuxO3 （x= 0.10, 0. 14, 0.18） solid solution is prepared with the conventional solid-state reaction technique. The electrical resistivity and the Seebeck coefficient are measured in the temperature range 473-1073 K to elucidate the Cu doping effect on the thermoelectrie properties of the LaFeO3. The electrical resisitivity of LaFe1-xCuxO3 shows semicondueting behavior. The temperature dependence of the electrical resistivity indicates that the adiabatic small-polaron hopping mechanism is dominant for their electric transportations. The activation energy decreases with the increasing Cu content as well as the increasing temperature. The Seebeck coefficient changes from a negative value to a positive value around 510 K, and increases with rising temperature up to 710K, then becomes saturated around 200 μ V/K. The Seebeek coefficient decreases with the substitution of Cu atoms in the temperature range of 573-1073 K, while the electrical resistivity decreases with the substitution of Cu atoms in the whole measured temperature. Overall the power factor increases with rising temperature, and the highest value of power factor is 54μW/K^2m for x = 0.10 of Cu doping.

分 类 号：O643.36[理学—物理化学] TM2[理学—化学]