Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric  

作　　者：黄玥 苟鸿雁 孙清清 丁士进 张卫 张世理 

机构地区：[1]State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 [2]School of Information and Communication, KTH, Royal Institute of Technology, Electrum 229, SE-164 40 Kista, Sweden

出　　处：《Chinese Physics Letters》2009年第10期200-202,共3页中国物理快报（英文版）

摘　　要：We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO2 films aminosilanized by （3-Aminopropyl）-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 × 10^11 cm^-2 and a diameter range of 5-8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO2 dielectric exhibits a large C - V hysteresis window of 11.9 V for ±11 V gate voltage sweeps at 1MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1ms, a leakage current density of 2.9 × 10^-8 A/cm^-2 at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed.We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO2 films aminosilanized by （3-Aminopropyl）-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 × 10^11 cm^-2 and a diameter range of 5-8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO2 dielectric exhibits a large C - V hysteresis window of 11.9 V for ±11 V gate voltage sweeps at 1MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1ms, a leakage current density of 2.9 × 10^-8 A/cm^-2 at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed.

关 键 词：Electronics and devices Semiconductors Surfaces interfaces and thin films Nanoscale science and low-D systems 

分 类 号：TN305[电子电信—物理电子学] TM862[电气工程—高电压与绝缘技术]