硅谐振式压力传感器静态特性测试  

Static Characteristic Test for Silicon Micromachined Resonant Pressure Sensors

作　　者：汤章阳[1] 樊尚春[1] 蔡晨光[1] 

机构地区：[1]北京航空航天大学仪器科学与光电工程学院,北京100083

出　　处：《计测技术》2009年第B09期3-4,13,共3页Metrology & Measurement Technology

摘　　要：讨论了一种硅谐振式压力传感器静态特性测试。该传感器采用复合敏感结构，以方形膜片为直接感压元件，谐振梁为谐振敏感元件，采用硅微机械加工工艺制作而成；针对其拾振信号特点，设计了基于锁定放大原理的闭环系统，保证传感器工作时的谐振状态。对真空封装后的2只传感器进行了静态特性测试，比较实验结果可知机械品质因数（Q值）较高的传感器的重复性和综合误差明显优于Q值较低的传感器。The static characteristic test of silicon resonant pressure sensors is presented in this paper. The compound sensing structure is consists of a rectangle membrane and a doubly clamped resonant beam. The former senses the pressure directly, while the latter changes its reso- nant frequency under the pressure indirectly. The close - loop system based on phase - lock principle is designed on purpose. Sensors are fabrica- ted by micromachining process, and static characteristic test is carried out with two vacuum sealed sensors. The experiment results demonstrate that the higher the quality value （ Q value） is, the better the repeatability and total error are.

关 键 词：压力传感器 谐振式 硅微机械 闭环系统 静态特性测试 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]