驱动高压浮动MOSFET的自举电容设计  

Bootstrap Capacitor Design to Drive High Voltage Floating MOSFET

作　　者：刘桂英[1] 成叶琴[1] 周琴[1] 

机构地区：[1]上海电机学院电气学院,上海200240

出　　处：《上海电机学院学报》2009年第3期190-193,共4页Journal of Shanghai Dianji University

摘　　要：介绍高压浮动MOSFET自举驱动电路的工作原理和高压驱动芯片的内部原理;讨论影响自举电容设计的各种因素,并给出自举电容的计算公式。通过实例,以测试波形来证明设计结果的准确性,表明其具有实际应用价值。The principle of bootstrap driving circuit for high voltage floating MOSFET and the internal circuit principle of high voltage driving IC are introduced. The parameters which are relative to the bootstrap capacitor design are discussed in detail, and the formula for the capacitor is presented. The example and the testing waveforms are shown to demonstrate the correctness of our design, which makes the proposed design be possibly applied in practical applications.

关 键 词：自举电路 驱动芯片 高压浮动MOSFET 

分 类 号：TN86[电子电信—信息与通信工程] TN712