Cl2/H2 ICP刻蚀优化及其在1.55μm DFB激光器制作中的应用  

Processing parameters optimization of Cl_2/H_2 ICP etching and its used for the fabrication of 1.55 μm DFB laser

作　　者：江山 董雷[2] 张瑞康 罗勇 谢世钟[3] 

机构地区：[1]武汉光迅科技股份有限公司,湖北武汉430074 [2]山东大学信息科学与工程学院,山东济南250100 [3]清华大学电子工程系,北京100084

出　　处：《光电子．激光》2009年第5期583-586,共4页Journal of Optoelectronics·Laser

基　　金：国家高技术研究发展计划资助项目(2006AA03Z427);国家重点基础研究发展规划资助项目(2003CB314903)

摘　　要：采用特别设计的InGaAsP/InP多量子阱结构(MQW),研究了Cl2/H2电感耦合等离子体(ICP)刻蚀损伤,优化了低损伤ICP刻蚀的关键工艺参数,得到了一种低损伤、形貌良好的Bragg光栅的制作方法。结合优化的InP材料金属有机物化学气相沉积(MOCVD)外延生长工艺,制作出1.55μm分布反馈(DFB)激光器,端面镀膜前其阈值电流和斜率效率分别为15mA和0.3mW/mA,边模抑制比大于45dB。寿命加速老化实验结果显示,该器件40℃的中值寿命超过2×106h,表明了本文ICP光栅刻蚀工艺的可靠性。Using specially designed InGaAsP/InP multiple quantum well（MQW） structure, the damage effects of Cl2/H2 inductive coupled plasma（ICP） etching were investigated systematically, and the key processing parameters for low damage ICP etching have been optimize＆ An effective method for the lab rication of Bragg grating with low damage and high quality surface has been obtained. Combined with well optimized metal organic chemical vapour deposition（MOCVD） growth technique, a 1.55 μm DFB laser has been fabricated. Before endface optical coating, its threshold current, slope efficiency and side mode suppression ratio are 15 mA,0.3 mW/mA and 45 dB,respectively. The result of accelerated aging test shows that its median life at 40 ℃ is more that 2×10^6 h,which verifies the reliability of our ICP etching processing in Bragg grating fabrication.

关 键 词：电感耦合等离子体(ICP)刻蚀 金属氧化物化学气相沉积(MOCVD) 分布反馈(DFB)激光器 可靠性 

分 类 号：TN248.4[电子电信—物理电子学]