立方磁晶各向异性对面内场下硬磁畴的影响  

Influence of cubic crystalline anisotropy on hard domain under in-plane field

作　　者：尹世忠[1] 孙会元[2] 

机构地区：[1]邢台学院物理系,河北邢台054001 [2]河北师范大学物理科学与信息工程学院,河北石家庄050016

出　　处：《河北科技大学学报》2009年第3期193-196,共4页Journal of Hebei University of Science and Technology

基　　金：国家自然科学基金资助项目(10274018);河北省自然科学基金资助项目(A2009000254);河北师范大学博士基金资助项目(L2006B10);河北省科技支撑计划项目课题资助项目(2009SP084)

摘　　要：实验研究了立方磁晶各向异性对面内场作用下非压缩状态的三类硬磁畴(普通硬磁泡(OHB)、第Ⅰ类哑铃畴(ID)和第Ⅱ类哑铃畴(IID))畴壁中垂直布洛赫线(VBL)的影响,发现对应于垂直布洛赫线消失的临界面内场的数值变化与磁畴消失场的数值变化规律相反,且该临界面内场的变化呈六重对称性。此外,发现立方磁晶各向异性对垂直布洛赫线消失的临界面内场的影响很小。The influence of cubic crystalline anisotropy on the hard domain under in-plane field was investigated experimentally. It was found that the critical in-plane fields change periodically when the crystal direction changes in plane, and their changes are opposite to the domain-erasing field. A six-fold symmetry of the critical in-plane field in the sample plane was observed. Applying in-plane field in different directions, the influence of crystal direction on the annihilation of VBLs in hard domain walls is only of a small magnitude.

关 键 词：临界面内场 硬磁泡 垂直布洛赫线 

分 类 号：O484.1[理学—固体物理]