反熔丝型现场可编程门阵列单粒子锁定实验研究  

Experimental Study on Single Event Latchup of Anti-fuse Field Programmable Gate Array

作　　者：田恺[1] 曹洲[1] 薛玉雄[1] 杨世宇[1] 周新发[2] 刘群[2] 彭飞[2] 

机构地区：[1]兰州物理研究所,真空低温技术与物理国家级重点实验室,甘肃兰州730000 [2]北京控制工程研究所,北京100190

出　　处：《原子能科学技术》2009年第9期855-859,共5页Atomic Energy Science and Technology

基　　金：真空低温技术与物理国家级重点实验室基金资助项目(9140C5503070803)

摘　　要：利用单粒子效应脉冲激光和锎源模拟试验系统,对反熔丝型A42MX36现场可编程门阵列进行了单粒子锁定敏感性评估试验。脉冲激光试验确定了单粒子锁定脉冲激光阈值能量及其等效重离子LET、锁定电流等敏感参数;锎源模拟试验确定了单粒子锁定截面。对试验中出现的由单粒子绝缘击穿和单粒子伪锁定引起的电流跃变现象进行了讨论和分析。Single event latchup sensitivity evaluation tests of anti-fuse A42MX36 field programmable gate array were performed using pulsed laser and 252Cf source single event effect simulation system.The sensitivity parameters such as pulsed laser threshold energy as well as its equivalent heavy-ion LET and latchup current of device were determined in pulsed laser test.The latchup cross-section was obtained in 252Cf source test.The current-jump phenomena induced by single event dielectric rupture（SEDR） and pseudo single event latchup（pSEL） in test was also discussed and analyzed.

关 键 词：A42MX36现场可编程门阵列 电流跃变 单粒子绝缘击穿 单粒子伪锁定 

分 类 号：TN406[电子电信—微电子学与固体电子学]