低噪声X波段再生式分频组件研究  

Low Phase Noise X-band Regenerative Frequency Dividers Design

作　　者：杨非[1] 齐宁华[1] 徐欧[1] 孙忠良[1] 

机构地区：[1]东南大学毫米波国家重点实验室,南京210096

出　　处：《固体电子学研究与进展》2009年第3期369-372,共4页Research & Progress of SSE

基　　金：国家自然科学基金委创新基金资助(60621002)

摘　　要：采用低噪声再生式分频技术,设计了低噪声X波段再生式分频组件。首先研究讨论了再生式分频的噪声理论,分析了有源器件对于近载波噪声和远载波噪声性能的影响。接着设计制作了两级锗硅HBT放大器、混频器、微带结构带通、带阻滤波器和功率分配器,其中低1/f锗硅HBT放大器首次应用于低噪声再生式分频器的设计。最后对分频组件进行了测试,测试结果良好,在近载波相位噪声性能改善6dB;在远载波白噪声段,噪声小于-165dBc/Hz。测试结果与理论计算结果吻合良好,达到了低噪声的设计要求。The X-band regenerative divider is designed with the regenerative frequency dividing technique.Firstly,the noise theory is discussed,including the component s influence to the noise performance at the near-carrier and far-carrier frequency band.Then,two-stage SiGe amplifier,mixer,band-pass filter,band-stop filter and power divider are designed and fabricated.SiGe amplifier with low 1/f performance is the first time to be used in the design of regenerative divider.After measurement,the phase noise at the near-carrier frequency band is decreased about 6 dB, the noise at the far-carrier frequency band is lower than -165 dBc/Hz. Both agree well with the theory, and the design achieves the low noise requirement.

关 键 词：低噪声 X波段 再生式分频 锗硅放大器 

分 类 号：TN77[电子电信—电路与系统]