硅衬底上ZnO纳米线的制备及其导电性能(英文)  

Electric Property of Nanostructural ZnO Fabricated on Silicon Substrate

作　　者：陈华宝[1,2] 徐春祥[1] 

机构地区：[1]东南大学电子科学与工程学院先进光子学中心,南京210096 [2]淮阴师范学院电子与电气工程系,江苏淮安223001

出　　处：《电子器件》2009年第4期729-732,共4页Chinese Journal of Electron Devices

基　　金：supported by the National Natural Science Foundation of China(60725413,60576008,and10674023);863program(2006AA03Z313);973program(2007CB936300)

摘　　要：采用无催化剂的气相输运方法在n-Si衬底上制备了ZnO纳米线.其直径约100nm至200nm,长度约几微米,X射线衍射图谱的所有峰位与典型的六角纤锌矿ZnO相匹配.霍尔效应测量表明纳米结构ZnO具有良好的导电性.纳米ZnO/n-Si的电压电流关系显示其具有整流特性.基于纳米ZnO/n-Si界面的能带结构对其导电特性进行了分析讨论。Zinc oxide nanowires have been fabricated on a n-type silicon substrate by a simple catalyst-free vapor phase transport.The size of the nanowires is about 100 nm to 200 nm in diameter and several tens microns in length.All peaks of X-ray diffraction pattern matched with the orientation data of the typical hexagonal ZnO.Hall effect measurement demonstrated that the nanostructural ZnO had good conductivity.The current-voltage dependence of nano-ZnO/n-Si showed rectificative behavior.The discussion on the electrical behavior was carried out based on the energy band structure of nano-ZnO/n-Si interface.

关 键 词：纳米线 导电性 I-V特性 能带结构 

分 类 号：O614[理学—无机化学]