一种高增益低噪声CMOS混频器设计  

Design of a High Gain and Low Noise CMOS Mixer

作　　者：程知群[1] 李进[1] 傅开红[1] 朱雪芳[1] 高俊君[1] 

机构地区：[1]杭州电子科技大学射频电路与系统教育部重点实验室,杭州310018

出　　处：《电子器件》2009年第4期737-741,共5页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助项目(60776052)

摘　　要：设计了一种基于跨导互补结构的电流注入混频器,通过在吉尔伯特混频器电路的本振开关管源极增加PMOS管形成电流注入电路减小本振端的偏置电流,改善电路的闪烁噪声和增大电路的增益。采用SMIC0.18μm标准CMOS工艺设计,在本振(LO)信号的频率为1.571GHz,射频(RF)信号频率为1.575GHz时,混频器的增益为17.5dB,噪声系数(NF)为8.35dB,三阶交调截止点输入功率(IIP3)为-4.6dBm。混频器工作电压1.8V,直流电流为8.8mA,版图总面积为0.63mm×0.78mm。A current bleeding CMOS mixer with complementary transconductance stage is designed. The conversion gain of the mixer is increased and the flicker noise of the mixer is reduced by inserting the PMOS to form current bleeding circuit at the source ports of the switch transistors in Gilbert mixer. The circuit is designed using SMIC 0. 18μm CMOS process. The LO frequency is 1. 571 GHz,RF frequency is 1. 575 GHz, simulation results show the conversion gain of the mixer is 17.5 dB,NF is about 8. 35 dB,and input power of third-order intercept point（IIP3） is-4. 6 dBm. The mixer consumes 8.8 mA at 1.8 V power supply and the size of the mixer is 0. 63 mm×0.78mm.

关 键 词：高增益 低噪声 混频器 电流注入 

分 类 号：TN4[电子电信—微电子学与固体电子学]