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作 者:LI XianJie QI LiFang GUO WeiLian YU JinLong ZHAO YongLin CAI DaoMin YIN ShunZheng MAO LuHong
机构地区:[1]13th Institute of China Electronic Technology Group Corporation, Shijiazhuang 050051, China [2]School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China
出 处:《Chinese Science Bulletin》2009年第20期3716-3719,共4页
基 金:Supported by the National Natural Science Foundation of China (Grant No.60706035);National Basic Research Program of China (Grant No. 2003CB314901)
摘 要:Based on InAlGaAs multi-quantum wells epitaxy structure for Fabry-Pero laser diode,a multi-quantum wells semiconductor ring laser is realized using ICP dry etching process and polyimide planarization process.The laser is generated in a semiconductor resonator ring and is output by two coupled integrated bus waveguides.The ring diameter is 700 μm and the width of the waveguide is 3 μm.The output optical power-current(P-I) characteristic and the wavelength spectra of the ring laser are measured using a fiber coupled to the cleaved facet of the bus waveguide.The threshold current of the device is 120 mA and the wavelength is 1602 nm at an injected current of 160 mA.In addition,the operation mode for the laser in the resonator ring is roughly discussed based on the P-I characteristic plot.Based on InAIGaAs multi-quantum wells epitaxy structure for Fabry-Pero laser diode, a multi-quantum wells semiconductor ring laser is realized using ICP dry etching process and polyimide planarization process, The laser is generated in a semiconductor resonator ring and is output by two coupled integrated bus waveguides. The ring diameter is 700μm and the width of the waveguide is 3 μm. The output optical power-current (P-I) characteristic and the wavelength spectra of the ring laser are measured using a fiber coupled to the cleaved facet of the bus waveguide. The threshold current of the device is 120 mA and the wavelength is 1602 nm at an injected current of 160 mA. In addition, the operation mode for the laser in the resonator ring is roughly discussed based on the P- I characteristic plot.
关 键 词:波导激光器 多量子阱 量子阱半导体激光器 耦合环 光学 输出电流 耦合波导 激光波长
分 类 号:TN248.22[电子电信—物理电子学] TN215
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