Mn掺杂对多铁性BiFeO_3薄膜铁电性能以及漏电流的影响  

EFFECTS OF MN-DOPING ON THE FERROELECTRIC AND LEAKAGE PROPERTIES OF MULTIFERROIC BiFe_(1-x)Mn_xO_3 THIN-FILMS

作　　者：訾玉宝[1] 焦兴利[1] 王海峰[1] 刘亲壮[1] 殷志珍[1] 张福恒[1] 黄振[1] 吴文彬[1] 

机构地区：[1]合肥微尺度物质科学国家实验室(筹),中国科学技术大学,合肥230026

出　　处：《低温物理学报》2009年第4期280-285,共6页Low Temperature Physical Letters

摘　　要：本文利用脉冲激光沉积技术在(LaAlO3)0.3(Sr2AlTaO6)0.7(001)衬底上生长了BiFe1-xMnxO3(x=0～5%)外延薄膜,研究了Mn掺杂对BiFeO3(BFO)薄膜结构、铁电特性和漏电流的影响.XRD和SEM结果表明薄膜具有良好的结晶质量.漏电流测量显示Mn掺杂有效地减小了BFO薄膜的漏电流密度,因而在室温下5%Mn掺杂的BFO薄膜能够获得饱和的电滞回线.XPS分析证明,Mn掺杂改善BFO薄膜性能的可能原因在于其极大地减少了BFO薄膜中的Fe2+离子.Mn-doped BiFeO3 films have been grown on （LaAlO3）0.3（Sr2AlTaO6）0.7 （001） substrates by the pulsed laser deposition method, and the effects of Mn doping on their leakage and ferroelectric properties were investiga- ted. The current density versus electric field curves measured from the Mn-doped and undoped BFO epitaxial films indicate that the Mn-doping can effectively suppress the leakage current. As a result, we got well-saturated polariza- tion-electric field hysteresis-loops in 5 % Mn doped BFO film at room temperature. XPS spectra reveal that this im- provement could be attributed to the greatly reduced Fe2＋ in the films due to the Mn-doping.

关 键 词：铁酸铋 多铁 铁电 漏电流密度 锰掺杂 脉冲激光沉积 

分 类 号：O484.42[理学—固体物理]