基于0.25μm工艺的INMOS管变容特性分析及Hspice模拟  

Analysis and Hspice Simulation of INMOS Duct’s Transfiguration Character based on 0.25μm Technology

作　　者：徐进[1,2] 季爱明[1] 

机构地区：[1]苏州大学电子信息学院,江苏苏州215006 [2]苏州经贸职业技术学院机电系,江苏苏州215008

出　　处：《中国西部科技》2009年第29期19-21,共3页Science and Technology of West China

摘　　要：文章对MOS管的变容特性结合现有的文献作了简要分析,以0.25μm工艺的INMOS的变容特性作了深入分析,并利用Hspice进行了仿真,对MOS管的变容特性作了深入讨论。并针对VCO电路对MOS的变容区间提出一些合理的建议。The paper gives a summaryanalysis about current documents on MOS duct＇s transliguration character and gives a depth analysis on INMOS duct＇ s transfiguration character based on 0.25 μ m technology. It uses Hspice to make simulation and goes into further discussion.on MOS duct＇ s transfiguration character. Also it gives some reasonable proposal aiming at the transfiguration range of VCO circuit.

关 键 词：MOS HSPICE INMOS VCO 

分 类 号：TN312.2[电子电信—物理电子学] TN405.7