场发射显示Ag膜电极的制备及其电性能  

Preparation and Electric Performance of Ag Films as Field Emission Display Electrodes

作　　者：曾祥耀[1] 叶芸[1] 袁军林[1] 郭太良[1] 

机构地区：[1]福州大学物理与信息工程学院,福建福州350002

出　　处：《发光学报》2009年第5期706-711,共6页Chinese Journal of Luminescence

基　　金：国家"863"计划平板显示重大专项(2008AA03A313);福建省重大科技专项(2004HZ01-2);福州大学博士基金(826369)资助项目

摘　　要：场发射显示(FED)被认为是CRT的平板化,受到人们关注。作者采用直流磁控溅射法,在Al2O3过渡层上制备面心立方结构的Ag多晶薄膜。通过XRD、SEM、AFM测试分析发现,溅射功率分为两个区域,在溅射功率不高于2.8kW时,沉积速率随着功率线性增大,得到Ag膜晶粒尺寸均一,薄膜电阻率逐步降低;溅射功率高于2.8kW后,沉积速率没有显著增大,出现较多的大晶粒,电阻率升高,并且从理论上给出了解释。综合来看,溅射功率在2.8kW所制备的Ag膜微观结构质量达到最佳,电阻率也达到最小值。By using direct current （DC） magnetron sputtering method, silver films were deposited on large area plane glasses, which were pre-deposited with Al2O3 films with thickness of 25 nm. The relationships between sputtering power and deposited rate, surface microstructure and electric resistivity of silver films were studied. When sputtering power is lower than 2.8 kW, the deposited rate increases steadily with sputtering power, and homogeneous silver films with decreasing electric resistivity were obtained. However, silver films with abnormally large grains and increasing electric resistivity were fabricated when sputtering power is more than 2.8 kW. Silver film with the best mierostructure and the lowest electric resistivity is obtained at the sputtering power of 2.8 kW.

关 键 词：银薄膜 磁控溅射功率 微观结构 电阻率 

分 类 号：O484.1[理学—固体物理] O484.42[理学—物理]