AlGaAs/GaAs HBT的低频噪声  

Low-frequency Noise of AlGaAs/GaAs HBT

作　　者：廖小平[1] 顾世惠[2] 林金庭[2] 魏同立[1] 

机构地区：[1]东南大学微电子中心,南京210096 [2]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》1998年第3期275-279,共5页Research & Progress of SSE

摘　　要：测试了AlGaAs／GaAsHBT的低频噪声，并将测试结果分解为1／f噪声、G－R噪声和白噪声，阐述了它们的产生机理，在此基础上建立了AlGaAs／GaAsHBT输入噪声电压的等效电路模型，该模型有助于AlGaAs／GaAsHBT电路的CAD。We have measured low-frequency noise of AlGaAs/GaAs HBT, decomposed the result into 1/f noise, G-R noise and white noise, and explained thereasons why they exist. On these bases, we construct an input low-frequency noisevoltage equivalent circuit model of AlGaAs/GaAs HBT, this model can be used inthe AlGaAs/GaAs HBT circuit CAD.

关 键 词：HBT 低频噪声 化合物晶体管 

分 类 号：TN325.3[电子电信—物理电子学]