(SrZrO_3)_(10)(SrTiO_3)_(90)缓冲层对PZT结晶及性能的影响  

Effect of (SrZrO_3)_(10)(SrTiO_3)_(90) Buffer Layer on the Crystallization and Ferroelect

作　　者：辛红[1] 苏未安[2] 王艳阳[1] 

机构地区：[1]西安建筑科技大学理学院,西安710055 [2]江西理工大学理学院,赣州341000

出　　处：《硅酸盐通报》2009年第5期1060-1063,1075,共5页Bulletin of the Chinese Ceramic Society

摘　　要：采用Sol-gel法制备了PbZr0.52Ti0.48O3(PZT)薄膜,并研究了(SrZrO3)10(SrTiO3)90((SZO)10(STO)90)缓冲层对PZT薄膜结晶和性能的影响。X射线衍射(XRD)结果表明:(SZO)10(STO)90缓冲层对PZT薄膜结晶有取向诱导作用,由(SZO)10(STO)90诱导的PZT薄膜有很强的(111)择优取向,缓冲层将PZT薄膜的取向度α由45.0%提高到了90.1%以上;PZT的(111)择优取向提高了薄膜的电性能,使剩余极化强度Pr从26.8μC/cm2增大到38.8μC/cm2。PbZr0.52Ti0.48O3（PZT）thin films were prepared by a Sol-gel method with（SZO）10（STO）90 buffer layer.The effect of（SZO）10（STO）90 buffer layer on the crystallization and ferroelectric properties of PZT thin films was investigated.X-ray diffraction patterns show that the crystallization of PZT thin films varies with buffer layer clearly.（SZO）10（STO）90 seeding layer almost results in the formation of a single（111）-textured PZT film,and（111）-orientation degree increases from 45.0% to more then 90.1%.At the same time, ferroelectric properties of the PZT thin film are improved by （SZO）10 （STO） 90 seeding layer, remanent polarization increases from 26.8 μC/cm^2 to 38.8 μC/cm^2.

关 键 词：缓冲层 薄膜 结晶 (SZO)10(STO)90 

分 类 号：O484[理学—固体物理]