MOS结构衬底电阻率ρ对光电参数的影响  

Influence of MOS Structure Substrate Resistivity on the Photoelectric Parameters

作　　者：陈杰[1] 戴文战[2] 

机构地区：[1]杭州应用工程技术学院电机系 [2]杭州商学院电子系

出　　处：《半导体技术》1998年第5期40-42,共3页Semiconductor Technology

摘　　要：用高阻ｐ型硅（ρ＝１２０００Ωｃｍ）单晶材料制作了ＭＯＳ结构器件，对样管的光电参数进行了测量。在激光辐射下，测出样管在光照前后的Ｃ－Ｖ实验曲线及样管在０．４Ｖ偏压下，光照前后的电容相对变化率为３９．５％。而用低阻ｐ型硅制成的样管，在同样条件下，电容的变化量不大。The MOS structure device is fabricated with high resistivity p type silicon ( ρ =12000Ω·cm),and their photoelectric parameters are measured.The experimental C V curves with and without laser radiation were measured.The relative variation ratio of capacitance with laser radiation at 0 4 voltages is 39 5%.But the relative variation ratio for low resistivity p type silicon is about zero in same condition.

关 键 词：半导体光电器件 C-V特性曲线 光电容 测试 

分 类 号：TN360.7[电子电信—物理电子学]